MPSA14, MMBTA14, PZTA14 دیتاشیت

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مشاهده دیتاشیت MPSA14, MMBTA14, PZTA14	دانلود دیتاشیت

PZTA14 16 pages

RoHS: true
Category: Triode/MOS Tube/Transistor/Darlington Transistors
Datasheet: onsemi PZTA14
Transistor Type: NPN
Operating Temperature: -55°C~+150°C@(Tj)
Collector Current (Ic): 1.2A
Power Dissipation (Pd): 1W
Transition frequency (fT): 125MHz
DC current gain (hFE@Vce,Ic): 20000@5V,100mA
Collector-emitter voltage (Vceo): 30V
Collector cut-off current (Icbo@Vcb): 100nA
Collector-emitter saturation voltage (VCE(sat)@Ic,Ib): 1.5V@100mA,100uA
Package: SOT-223-4
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
Current - Collector (Ic) (Max): 1.2A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Power - Max: 1W
Frequency - Transition: 125MHz
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223-4
Base Part Number: PZTA14
detail: Bipolar (BJT) Transistor NPN - Darlington 30V 1.2A 125MHz 1W Surface Mount SOT-223-4